Sun, Y. et al.
Strain Effect in Semiconductors
Theory and Device Applications
（半導体の歪み効果）
Springer-New York 2009.12
350 pp.(H)
ISBN 1-4419-0551-0
20,900円
Contents
1. Band Structures of Strain Semiconductors/ 2. Transport Theory of Strained Semiconductors/ 3. Strain in Semiconductor Devices/ References/ Index/
* Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. *
Mikla, V. I. & Mikla, V. V.
Metastable States in Amorphous Chalcogenide Semiconductors
Springer-Verlag 2009.12
220 pp.(H)
ISBN 3-642-02744-X
16,400円
Contents
1. Introduction/ 2. Effect of Thermal Evaporation Conditions on Structure and Structural Changes in Amorphous Arsenic Sulfides/ 3. Optical Absorption and Structural Transformations in Arsenic Selenide Films/ 4. Trap Level Spectroscopy in Amorphous Selenium-Based Semiconductors/ 5. Photoinduced Effects on Electronic Metastable States/ 6. Deep Level Spectroscopy in Selenium-Rich Amorphous Semiconductors/ 7. Recombination Process and Nonisothermal Relaxation of Low-Temperature Photoinduced Effects/ 8. Electronic Properties of Materials with Gross Permanent Photoinduced Changes: Cu-As-Se Glasses/ 9. Carrier Transport in Selenium-Based Amorphous Multilayer Structures/ Index/
* This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. *
Ihn, T.
Semiconductor Nanostructures
Quantum states and electronic transport
（半導体ナノ構造）
Oxford U.P. 2010.1
580 pp.(H)
ISBN 0-19-953442-X
15,600円
Contents
1. Introduction/ 2. Semiconductor Crystals/ 3. Band Structure/ 4. Envelope function and effective mass approximation/ 5. Material aspects of heterostructures, doping, surfaces, and gating/ 6. Fabrication of semiconductor nanostructures/ 7. Electrostatics of Semiconductor nanostructures/ 8. Quantum mechanics of semiconductor nanostructures/ 9. Two-dimensional electron gases in heterostructures 10. Diffusive classical transport in two-dimensional electron gases/ 11. Ballistic electron transport in quantum point contacts/ 12. Tunneling transport through potential barriers/ 13. Multiterminal systems/ 14. Interference effects in nanostructures/ 15. Diffusive quantum transport/ 16. Magnetotransport in two-dimensional systems/ 17. Interaction effects in diffusive two-dimensional systems/ 18. Quantum dots/ 19. Coupled quantum dots/ 20. Electronic noise in semiconductor nanostructures/ 21. The Fano effect/ 22. Measurements of the transmission phase/ 23. Controlled dephasing experiments/ 24. Quantum information processing/ Index/
* This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. *
Oktyabrsky, S. & Ye, P. ed.
Fundamentals of III-V Semiconductor MOSFETs
III-V 族化合物半導体 MOSFET
Springer-Verlag 2010.2
480 pp.(H)
ISBN 1-4419-1546-X
20,700円
Contents
1. Towards III-V digital MOSFET circuits/ 2. Physics of compound semiconductors: band-engineered heterostructures and strain effects/ 3. Physics and modeling of compound semiconductor MOSFETs/ 4. P-channel MOSFETs/ 5. Compound semiconductor technology: MBE and MOCVD/ 6. Properties and trade-offs of compound semiconductor MOSFETs/ 7. Electronic structure and properties of high-k gate oxides/ 8. Interface chemistry of III-V's with oxides/ 9. Heterostructure FETs for digital circuits/ 10. Interface passivation techniques/ 11. Source/drain contact technologies/ 12. MOSFETs with Ga2O3 gate oxide/ 13. MOSFETs with ALD high-k oxides/ 14. Narrow bandgap MOSFETs: InAs and InSb as channel materials/ 15. GaN based MOSFETs/ 16. Electrical measurement issues for gate stacks and FETs/ 17. Circuits with III-V MOSFETs/ Index/ *
Hirsh, J. P. & Kubin, J. ed.
Dislocations in Solids Vol.16
The 30th Anniversary Volume
North-Holland 2009.9
296 pp.(H)
ISBN 0-444-53443-1
37,000円
Contents
92. Dislocations and Plasticity in bcc Transition Metals at High Pressure/ 93. Dislocations in Silicon at High Stress/ 94. Metadislocations/ 95. Dislocations in Minerals/ 96. Dislocations in Colloidal Crystals/ Index/
* New materials addressed for the first time include the chapters on minerals by Barber et al and the chapter on dislocations in colloidal crystals by Schall and Spaepen. Moriarty et al extend the first principles calculations of kink configurations in bcc metals to high pressures, including the use of flexible boundary conditions to model dilatational effects. Rabier et al clarify the issue of glide-shuffle slip systems in diamond cubic and related III-V compounds. Metadislocations, discussed by Feuerbacher and Heggen, represent a new type of defect in multicomponent metal compounds and alloys. *
Rogers, J. W. M. & Plett, C.
Radio Frequency Integrated Circuit Design 2nd ed.
Artech House 2010.2
635 pp.(H)
ISBN 1-60783-979-2
17,200円
Contents
1. Introduction To Communications Circuits/ 2. Issues in RFIC Design, Noise, Linearity and Signals/ 3. System Level Architecture and Design Considerations/ 4. A Brief Review of Technology/ 5. Impedance Matching/ 6. The Use and Design of Passive Circuit Elements in IC Technologies/ 7. Low Noise Amplifier (LNA) Design/ 8. Mixers/ 9. Voltage Controlled Oscillators/ 10. Frequency Synthesis/ 11. Power Amplifiers/ Index/
* This newly revised and expanded edition of the 2003 Artech House classic, Radio Frequency Integrated Circuit Design, serves as an up-to-date, practical reference for complete RFIC know-how. The second edition includes numerous updates, including greater coverage of CMOS PA design, RFIC design with on-chip components, and more worked examples with simulation results. *
Friedrichs, P. et al. ed.
Silicon Carbide (2 Volumes Set)
炭素ケイ素 全２巻
Wiley-VCH 2010.1
980 pp.(H) in 2Vols.
ISBN 3-527-41002-3
31,200円
Contents
* 本書は、半導体材料として利用される炭素ケイ素（SiC）について、最新の研究成果をまとめた資料です。
VOL 1: Growth, Defects, and Novel Applications: 1. Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution/ 2. Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds/ 3. Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique/ 4. Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects/ 5. Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches/ 6. EPR Identification of Intrinsic Defects in 4H-SiC/ 7. Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide/ 8. Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC/ 9. Characterization of defects in silicon carbide by Raman spectroscopy/ 10. Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation/ 11. Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers/ 12. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation/ 13. Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation/ 14. Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors/ 15. Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems/ 16. Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces/ 17. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS/ 18. Epitaxial Graphene: an new Material/ 19. Density Functional Study of Graphene Overlayers on SiC/
VOL 2: Power Devices and Sensors: 1. Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices/ 2. Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application/ 3. Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts/ 4. Reliability aspects of SiC Schottky Diodes/ 5. Design, process, and performance of all-epitaxial normally-off SiC JFETs/ 6. Extreme Temperature SiC Integrated Circuit Technology/ 7. 1200 V SiC Vertical-channel-JFET based cascode switches/ 8. Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors/ 9. High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen/ 10. 4H-SiC MISFETs with Nitrogen-containing Insulators/ 11. SiC Inversion Mobility/ 12. Development of SiC diodes, power MOSFETs and intellegent Power Modules/ 13. Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation/ 14. Application of SiC-Transistors in Photovoltaic-Inverters/ 15. Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs/ 16.Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs/ 17. SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection/ Index/ *
383-56 登録日 10.04.15
