Ehrentraut, D. et al. ed.
Technology of Gallium Nitride Crystal Growth
Springer-Verlag 2010.4
334 pp.(H)
ISBN 3-642-04828-5
18,200円
Contents
1. Development of the Gallium Nitride Market/ 2. HVPE of GaN/ 3. Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds/ 4. HVPE at Hitachi Cable/ 5. HVPE Technology/ 6. High-Growth Rate MOCVD/ 7. Ammonothermal Solution Growth/ 8. High-Pressure Solution (HPS) Growth of Gallium Nitride/ 9. Na Flux LPE/ 10. Ga Flux LPE/ 11. Optical Properties of GaN Substrates/ 12. Structural Properties of GaN/ Index/
* This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. *
Oktyabrsky, S. & Ye, P. ed.
Fundamentals of III-V Semiconductor MOSFETs
III-V 族化合物半導体 MOSFET
Springer-Verlag 2010.2
480 pp.(H)
ISBN 1-4419-1546-X
20,700円
Contents
1. Towards III-V digital MOSFET circuits/ 2. Physics of compound semiconductors: band-engineered heterostructures and strain effects/ 3. Physics and modeling of compound semiconductor MOSFETs/ 4. P-channel MOSFETs/ 5. Compound semiconductor technology: MBE and MOCVD/ 6. Properties and trade-offs of compound semiconductor MOSFETs/ 7. Electronic structure and properties of high-k gate oxides/ 8. Interface chemistry of III-V's with oxides/ 9. Heterostructure FETs for digital circuits/ 10. Interface passivation techniques/ 11. Source/drain contact technologies/ 12. MOSFETs with Ga2O3 gate oxide/ 13. MOSFETs with ALD high-k oxides/ 14. Narrow bandgap MOSFETs: InAs and InSb as channel materials/ 15. GaN based MOSFETs/ 16. Electrical measurement issues for gate stacks and FETs/ 17. Circuits with III-V MOSFETs/ Index/ *
Harris, R. K. et al. ed.
NMR Crystallography
NMR結晶学
John Wiley & Sons 2010.1
520 pp.(H)
ISBN 0-470-69961-2
15,800円
Contents
* The term "NMR Crystallography" has only recently come into common usage, and even now causes raised eyebrows within some parts of the diffraction community. The power of solid-state NMR to give crystallographic information has considerably increased since the CPMAS suite of techniques was introduced in 1976. In the first years of the 21st century, the ability of NMR to provide information to support and facilitate the analysis of single-crystal and powder diffraction patterns has become widely accepted.
* Indeed, NMR can now be used to refine diffraction results and, in favorable cases, to solve crystal structures with minimal (or even no) diffraction data. The increasing ability to relate chemical shifts (including the tensor components) to the crystallographic location of relevant atoms in the unit cell via computational methods has added significantly to the practice of NMR crystallography. Diffraction experts will increasingly welcome NMR as an allied technique in their structural analyses. Indeed, it may be that in the future crystal structures will be determined by simultaneously fitting diffraction patterns and NMR spectra.
* This Handbook is organised into six sections. The first contains an overview and some articles on fundamental NMR topics, followed by a section concentrating on chemical shifts, and one on coupling interactions. The fourth section contains articles describing how NMR results relate to fundamental crystallography concepts and to diffraction methods. The fifth section concerns specific aspects of structure, such as hydrogen bonding. Finally, four articles in the sixth section give applications of NMR crystallography to structural biology, organic & pharmaceutical chemistry, inorganic & materials chemistry, and geochemistry. *
Ihn, T.
Semiconductor Nanostructures
Quantum states and electronic transport
（半導体ナノ構造）
Oxford U.P. 2010.1
580 pp.(H)
ISBN 0-19-953442-X
15,600円
Contents
1. Introduction/ 2. Semiconductor Crystals/ 3. Band Structure/ 4. Envelope function and effective mass approximation/ 5. Material aspects of heterostructures, doping, surfaces, and gating/ 6. Fabrication of semiconductor nanostructures/ 7. Electrostatics of Semiconductor nanostructures/ 8. Quantum mechanics of semiconductor nanostructures/ 9. Two-dimensional electron gases in heterostructures 10. Diffusive classical transport in two-dimensional electron gases/ 11. Ballistic electron transport in quantum point contacts/ 12. Tunneling transport through potential barriers/ 13. Multiterminal systems/ 14. Interference effects in nanostructures/ 15. Diffusive quantum transport/ 16. Magnetotransport in two-dimensional systems/ 17. Interaction effects in diffusive two-dimensional systems/ 18. Quantum dots/ 19. Coupled quantum dots/ 20. Electronic noise in semiconductor nanostructures/ 21. The Fano effect/ 22. Measurements of the transmission phase/ 23. Controlled dephasing experiments/ 24. Quantum information processing/ Index/
* This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. *
Duncan, J. I. & Klein, A. B. ed.
Chemical Reactions on Surfaces
Nova Science Pub. 2008.10
324 pp. (H)
ISBN 1-60456-898-4
25,000円
Contents
1.Multicomponent Organic Compounds Physisorption and Desorption on Silicon Surface/ 2.Light Emissions from Nanoporous Silicon Surfaces by a Novel Chemical Anodization Processes/ 3.Chemical Reactions on Solid Surfaces by Liquid Custer Ion Beams/ 4.Chemical Modification of Carbon Materials with Fluorine Functionalities/ 5.Autonomous Motion of Liquids Interface Controlled by Chemical Reaction/ 6.Surface Controlled Reaction Kinetics on Calcium-Based Sorbents/ 7.Effective Electrochemical Transformation Method of Valve Metals Surface Layer into High-Tensile Ceramic Coating/ 8.Electronic Fingerprinting of Adsorbed Species by Means of the Substrate Core Level Excitation/ 9.CO Oxidation at Low Temperature over Gold Catalysts/ Index/
* Chemical reactions on catalytic surfaces play a vital role in many industrial operations, such as the production of artificial fertilizers. Surface chemistry can even explain the destruction of the ozone layer, as vital steps in the reaction actually take place on the surfaces of small crystals of ice in the stratosphere. The semiconductor industry is yet another area that depends on knowledge of surface chemistry.I *
Hamaguchi, C.
Basic Semiconductor Physics 2nd ed.
Springer-Verlag 2009.11
570 pp.(H)
ISBN 3-642-03302-4
13,700円
Contents
1. Energy Band Structures of Semiconductors/ 2. Cyclotron Resonance and Energy Band Structures/ 3. Wannier Function and Effective Mass Approximation/ 4. Optical Properties 1/ 5. Optical Properties 2/ 6. Electron - Phonon Interaction and Electron Transport/ 7. Magnetotransport Phenomena/ 8. Quantum Structures/ 9. Light Emission and Laser/ Index/
* This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. *
Friedrichs, P. et al. ed.
Silicon Carbide (2 Volumes Set)
炭素ケイ素 全２巻
Wiley-VCH 2010.1
980 pp.(H) in 2Vols.
ISBN 3-527-41002-3
31,200円
Contents
* 本書は、半導体材料として利用される炭素ケイ素（SiC）について、最新の研究成果をまとめた資料です。
VOL 1: Growth, Defects, and Novel Applications: 1. Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution/ 2. Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds/ 3. Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique/ 4. Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects/ 5. Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches/ 6. EPR Identification of Intrinsic Defects in 4H-SiC/ 7. Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide/ 8. Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC/ 9. Characterization of defects in silicon carbide by Raman spectroscopy/ 10. Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation/ 11. Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers/ 12. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation/ 13. Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation/ 14. Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors/ 15. Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems/ 16. Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces/ 17. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS/ 18. Epitaxial Graphene: an new Material/ 19. Density Functional Study of Graphene Overlayers on SiC/
VOL 2: Power Devices and Sensors: 1. Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices/ 2. Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application/ 3. Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts/ 4. Reliability aspects of SiC Schottky Diodes/ 5. Design, process, and performance of all-epitaxial normally-off SiC JFETs/ 6. Extreme Temperature SiC Integrated Circuit Technology/ 7. 1200 V SiC Vertical-channel-JFET based cascode switches/ 8. Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors/ 9. High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen/ 10. 4H-SiC MISFETs with Nitrogen-containing Insulators/ 11. SiC Inversion Mobility/ 12. Development of SiC diodes, power MOSFETs and intellegent Power Modules/ 13. Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation/ 14. Application of SiC-Transistors in Photovoltaic-Inverters/ 15. Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs/ 16.Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs/ 17. SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection/ Index/ *
385-43 登録日 10.04.04
