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Kumar, C. S. S. R. ed. Wiley-VCH 2010.4 * These ten volumes provide an excellent, in-depth overview of all nanomaterial types and their uses in the life sciences. Each volume is dedicated to a specific material class and covers fundamentals, synthesis strategies, structure-property relationships, material behaviour finetuning, biological effects and applications in the life sciences. All important material classes are covered: metallic, metal oxide, magnetic, carbon, polymeric, composite and semiconducting nanomaterials as well as nanostructured surfaces and films. * Klimov, V. I. ed. Huang, C. ed. Springer-Verlag 2010.3 * Although complementary metal-oxide semiconductor (CMOS) technology will continue dominating the digital electronic circuits for the next 10-15 years, a number of grand challenges have emerged as the transistor size scales down. The rising costs of semiconductor mask and fabrication pose economic barriers to lithography. The quantum effects and increasing leakage power begin setting physical limits on continuous CMOS feature size shrinking. * Ehrentraut, D. et al. ed. * This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. * Bennett, D. W. * The first textbook for teaching this method to users with little mathematical background logically presents the theory and fundamentals in an easily comprehensible, self-contained way. * Economou, E. N. Springer-Verlag 2010.2 * The book starts with the absolute minimum of formal tools, emphasizes the basic principles, and employs physical reasoning (" a little thinking and imagination" to quote R. Feynman) to obtain results. Continuous comparison with experimental data leads naturally to a gradual refinement of the concepts and to more sophisticated methods. * After the initial overview with an emphasis on the physical concepts and the derivation of results by dimensional analysis, Solid State Physics deals with the Jellium Model (JM) and the Linear Combination of Atomic Orbitals (LCAO) approaches to solids and introduces the basic concepts and information regarding metals and semiconductors. The remainder, constituting enrichment and elective material, re-examines the model under more realistic assumptions as well as new, more advanced subjects. While prerequisites include quantum mechanics, electromagnetism, and statistical physics, appendices summarizing these subjects are included to make the book more self-contained. * The basic text is enhanced with worked problems, copious illustrations, chapter-end exercises and summaries. The approach, which emphasizes the underlying physical concepts, unifies to some extent a subject that can seem too diverse and consisting of too many disjoint pieces, requires from students less memorizing of facts and formalisms but more thinking. * Hirsh, J. P. & Kubin, J. ed. North-Holland 2009.9 * New materials addressed for the first time include the chapters on minerals by Barber et al and the chapter on dislocations in colloidal crystals by Schall and Spaepen. Moriarty et al extend the first principles calculations of kink configurations in bcc metals to high pressures, including the use of flexible boundary conditions to model dilatational effects. Rabier et al clarify the issue of glide-shuffle slip systems in diamond cubic and related III-V compounds. Metadislocations, discussed by Feuerbacher and Heggen, represent a new type of defect in multicomponent metal compounds and alloys. * Friedrichs, P. et al. ed. Wiley-VCH 2010.1 VOL 1: Growth, Defects, and Novel Applications: 1. Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution/ 2. Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds/ 3. Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique/ 4. Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects/ 5. Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches/ 6. EPR Identification of Intrinsic Defects in 4H-SiC/ 7. Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide/ 8. Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC/ 9. Characterization of defects in silicon carbide by Raman spectroscopy/ 10. Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation/ 11. Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers/ 12. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation/ 13. Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation/ 14. Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors/ 15. Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems/ 16. Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces/ 17. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS/ 18. Epitaxial Graphene: an new Material/ 19. Density Functional Study of Graphene Overlayers on SiC/ |
