Rockett, A.
The Materials Science of Semiconductors
Springer-Verlag 2007.11
638 pp.(H) 【在庫有り】
ISBN 0-387-25653-9
13,600円
Contents
1. AN ENVIRONMENT OF CHALLENGES/ 2. THE PHYSICS OF SOLIDS/ 3. OVERVIEW OF ELECTRONIC DEVICES/ 4. ASPECTS OF MATERIALS SCIENCE/ 5. ENGINEERING ELECTRONIC STRUCTURE/ 6. SEMICONDUCTOR ALLOYS/ 7. DEFECTS IN SEMICONDUCTORS/ 8. AMORPHOUS SEMICONDUCTORS/ 9. ORGANIC SEMICONDUCTORS/ 10. THIN FILM GROWTH PROCESSES/ 11. PHYSICAL VAPOR DEPOSITION/ 12. CHEMICAL VAPOR DEPOSITION/ Index/
* The Materials Science of Semiconductors is focused on classical concepts of materials physics (including band theory), alloy design, defects and their physics, organic electronic materials, amorphous semiconductors, and thin film growth methods. This textbook includes a discussion of organic materials concepts and applications for light emitting and switching devices, and also covers the major methods for processing semiconductors from Czochralsky growth to atomic-layer deposition. * Unlike other books on semiconductors, this book discusses how band structures are developed and gives a detailed calculation technique based on the LCAO method, without any significant reliance on a background in quantum mechanics.
* Each chapter includes current applications, particularly in optoelectronics, along with recommended readings and homework problems. *
Wood, C. & Jena, D. ed.
Polarization Effects in Semiconductors
From Ab Initio Theory to Device Applications
Springer-New York 2007.11
522 pp.(H)
ISBN 0-387-36831-0
17,600円
Contents
Part.1:Theoretical Approach to Polarization Effects in Semiconductors: 1. Introduction/ 2. Basic Electrostatics/ 3. Polarization/ 4. Ab Initio Calculations of the Electronic Structure/ 5. Modern Theory of Polarization/ 6. Polarization at Interfaces: Interface Dipoles/ 7. Spontaneous Polarization in the Wurtzite Structure: BeO/ 8. GaN/AlN Superlattice: Spontaneous Polarization and Piezoelectricity/ 9. Electric Field-Driven Diffusion and Segregation of Dopants in Superlattices/ 10. Summary/ References/ Part.2:Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors: 1. Introduction/ 2. First-Principles Prediction of Structural and Pyroelectric Properties/ 3. Lattice Constants, Average Bond Length and Bond Angles in Ternary Compounds/ 4. Polarity/ 5. Growth of Undoped AlGaN/GaN, InGaN/GaN and AlInN/GaN Hetero- and Nanostructures/ 6. Non-Linear Spontaneous and Piezoelectric Polarization in Group-III-Nitrides/ 7. Polarization Induced Surface and Interface Charges/ 8. Sheet Carrier Concentration of Polarization Induced 2DEGs/ 9. Sensors Based on Polarization Induced 2DEGs/ 10. Summary/ References/ Part.3:Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: 1. Polar Heterostructures:What Do They Offer?/ 2. Theoretical Approach/ 3. Tailoring of Vertical Junctions/ 4. Nitride HFETS: Transport Issues/ 5. Smart HFETs: Multi-Functional Devices/ 6. Conclusions/ References/ Part.4:Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs: 1. Introduction/ 2. Polarization-Induced 2DEGs in AlGaN/GaN HEMTs/ 3. Scattering Mechanisms/ 4. Using Theory to Explain Experimental Data/ 5. Summary and Conclusions/ 6. Appendix on the Theory of Low-Field Transport & Mobility/ References/ Part.5:Local Polarization Effects in Nitride Heterostructures and Devices: 1. Introduction/ 2. Polarization-Based Engineering of Nitride Heterostructures/ 3. Localized Effects of Polarization/ References/ Part.6:Polarization inWide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy: 1. Introduction/ 2. III-N and SiC Heterostructures/ 3. Interface and Surface Charge in SiC and III-N Heterojunctions/ 4. SPMCharacterization of Heterostructures/ 5. Summary/ References/ Part.7:Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices: 1. Introduction/ 2. Graded Polar Nitride Semiconductor Heterostructures/ 3. Universal Physics of Functionally Graded Ferroelectric and Ferromagnetic Alloys/ 4. Summary and Challenges/ References/ Part.9:Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs) : 1. Heterojunction Field Effect Transistors (HFETs)/ 2. AlGaN/GaN HFET Performance/ References/ Part.10:Effects of Polarization in Optoelectronic Quantum Structures: 1. Introduction/ 2. Basic Elements of the Theory of Polarization in III-V Nitride Heterostructures/ 3. Experimental Manifestation of Polarization Fields in Group-III Nitride Based Nanostructures / 4. Conclusion/ References/ Index/ *
Haug, H. & Jauho, A. - P.
Quantum Kinetics in Transport and Optics of Semiconductors 2nd ed.
Springer-Verlag 2008.
362 pp.(H)
ISBN 3-540-73561-5
21,200円
Contents
Part I: Introduction to Kineticsand Many-Body Theory: 1. Boltzmann Equation/ 2. Numerical Solutions of the Boltzmann Equation/ 3. Equilibrium Green Function Theory/ Part II: Nonequilibrium Many-Body Theory: 4. Contour-Ordered Green Functions/ 5. Basic Quantum Kinetic Equations/ 6. Boltzmann Limit/ 7. Gauge Invariance/ 8. Quantum Distribution Functions/ Part III: Quantum Transport in Semiconductors: 9 Linear Transport/ 10. Field-Dependent Green Functions/ 11. Optical Absorption in Intense THz Fields/ 12. Transport in Mesoscopic Semiconductor Structures/ 13. Time-Dependent Phenomena/ Part IV: Theory of Ultrafast Kinetics in Laser-Excited Semiconductors: 14. Optical Free-Carrier Interband Kinetics in Semiconductors/ 15. Interband Quantum Kinetics with LO-Phonon Scattering/ 16. Two-Pulse Spectroscopy/ 17. Coulomb Quantum Kinetics in a Dense Electron Hole Plasma/ 18. The Buildup of Screening/ 19. Femtosecond Four-Wave Mixing with Dense Plasmas/ References/ Index/
* Nanoscale miniaturization and femtosecond laser-pulse spectroscopy require a quantum mechanical description of the carrier kinetics that goes beyond the conventional Boltzmann theory. On these extremely short length and time scales the electrons behave like partially coherent waves. This monograph deals with quantum kinetics for transport in low-dimensional microstructures and for ultra-short laser pulse spectroscopy. The nonequilibrium Green function theory is described and used for the derivation of the quantum kinetic equations. Numerical methods for the solution of the retarded quantum kinetic equations are discussed and results are presented for high-field transport and for mesoscopic transport phenomena. Quantum beats, polarization decay, and non-Markovian behaviour are treated for femtosecond spectroscopy on a microscopic basis. *
Cressler, J. D.
Circuits and Applications Using Silicon Heterostructure Devices
CRC Press 2007.12
360 pp.(H)
ISBN 1-4200-6694-3
9,400円
Contents
1.The Big Picture/ 2.A Brief History of the Field/ 3.Circuits and Applications/ 4.Overview: Circuits and Applications/ 5.SiGe as an Enabler for Wireless Communications Systems/ 6.LNA Optimization Strategies/ 7.Linearization Techniques/ 8.SiGe MMICs/ 9.SiGe Millimeter-Wave ICs/ 10.Wireless Building Blocks Using SiGe HBTs/ 11.Direct Conversion Architectures for SiGe Radios/ 12.RF MEMS Techniques in Si/SiGe/ 13.Wideband Antennas on Silicon/ 14.Packaging Issues for SiGe Circuits/ 15.Industry Examples at State-of-the-Art: IBM/ 16.Industry Examples at State-of-the-Art: Hitachi/ 17.Industry Examples at State-of-the-Art: ST/ 18.Appendices/ 19.Properties of Silicon and Germanium/ 20.The Generalized Moll-Ross Relations/ 21.Integral Charge-Control Relations/ 22.Sample SiGe HBT Compact Model Parameters/ index/
*No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. *
Ohtsubo, J. ed.
Semiconductor Lasers 2nd ed.
Stability, Instability and Chaos
Springer-Verlag 2008.
475 pp.(H)
ISBN 3-540-72647-0
24,200円
Contents
Part.1: Introduction: 1.1 Chaos and Lasers/ 1.2 Historical Perspectives of Chaos in Semiconductor Lasers/ 1.3 Outline of This Book/ Part.2: Chaos in LaserSystems: 2.1 Laser Model and Bloch Equations/ 2.2 Lorenz-Haken Equations/ 2.3 Classifications of Lasers/ Part.3: Semiconductor Lasers and Theory: 3.1 Semiconductor Lasers/ 3.2 Oscillation Conditions of Semiconductor Lasers/ 3.3 Derivation of Rate Equations/ 3.4 Linear Stability Analysis and Relaxation Oscillation/ 3.5 Langevin Noises/ 3.6 Modulation Characteristics/ 3.7 Waveguide Models of Semiconductor Lasers/ Part.4: Theory of Optical Feedback in Semiconductor Lasers: 4.1 Theory of Optical Feedback/ 4.2 Linear Stability Analysis for Optical Feedback Systems/ 4.3 Feedback from a Grating Mirror/ 4.4 Phase-Conjugate Feedback/ 4.5 Incoherent Feedback and Polarization-Rotated Optical Feedback/ 4.6 Filtered Feedback/ Part.5: Dynamics of Semiconductor Lasers with Optical Feedback: 5.1 Optical Feedback from a Conventional Reflector/ 5.2 Dependence of Chaotic Dynamics on the External Mirror Position/ 5.3 Low-Frequency Fluctuations (LFFs)/ 5.4 Chaotic Dynamics in Short External Cavity Limit/ 5.5 Dynamics in Semiconductor Lasers with Grating Mirror Feedback/ 5.6 Dynamics in Semiconductor Lasers with Phase-Conjugate Mirror Feedback/ 5.7 Dynamics of Semiconductor Lasers with Incoherent Optical Feedback/ 5.8 Dynamics of Filtered Optical Feedback/ Part.6: Dynamics in Semiconductor Lasers with Optical Injection: 6.1 Optical Injection/ 6.2 Stability and Instability in Optical Injection Systems/ 6.3 Enhancement of Modulation Bandwidth and Generation of High Frequency Chaotic Oscillation by Strong Optical Injection/ Part.7: Dynamics of Semiconductor Lasers with Optoelectronic Feedback and Modulation: 7.1 Theory of Optoelectronic Feedback/ 7.2 Linear Stability Analysis for Optoelectronic Feedback Systems/ 7.3 Dynamics and Chaos in Semiconductor Lasers with Optoelectronic Feedback/ 7.4 Optoelectronic Feedback with Wavelength Filter/ 7.5 Chaotic Dynamics of Semiconductor Lasers Induced by Injection Current Modulation/ 7.6 Nonlinear Dynamics of Various Combinations of External Perturbations/ Part.8: Instability and Chaos in Various Laser Structures: 8.1 Multimode Lasers/ 8.2 Self-Pulsating Lasers/ 8.3 Vertical-Cavity Surface-Emitting Lasers (VCSELs)/ 8.4 Broad Area Lasers/ 8.5 Laser Arrays/ Part.9: Chaos Control and Applications: 9.1 General Methods of Chaos Control/ 9.2 Chaos Control in Semiconductor Lasers/ 9.3 Controlling Chaos and Noise Suppression/ Part.10: Stabilization of Semiconductor Lasers: 10.1 Linewidth Narrowing by Optical Feedback/ 10.2 Linewidth Narrowing by Optoelectronic Feedback/ 10.3 Stabilization in Lasers with Various Structures/ 10.4 Controls in Nobel Structure Lasers/ Part.11: Stability and Bistability in Feedback Interferometers, and Their Applications: 11.1 Optical Feedback Interferometers/ 11.2 Applications in Feedback Interferometer/ 11.3 Active Feedback Interferometer/ Part.12: Chaos Synchronization in Semiconductor Lasers: 12.1 Concept of Chaos Synchronization/ 12.2 Theory of Chaos Synchronization in Semiconductor Lasers with Optical Feedback/ 12.3 Chaos Synchronization in Semiconductor Lasers with an Optical Feedback System/ 12.4 Chaos Synchronization in Injected Lasers/ 12.5 Chaos Synchronization in Optoelectronic Feedback Systems/ 12.6 Chaos Synchronization in Injection Current Modulated Systems 12.7 Chaos Synchronization in Mutually Coupled Lasers/ Part.13: Chaotic Communications in Semiconductor Lasers: 13.1 Message Encryption in a Chaotic Carrier and Its Decryption/ 13.2 Cryptographic Applications in Optical Feedback Systems/ 13.3 Cryptographic Applications in Optical Injection Systems/ 13.4 Cryptographic Applications in Optoelectonic Systems/ 13.5 Performance of Chaotic Communications/ 13.6 Security of Chaotic Communications/ 13.7 Chaotic Carrier and Bandwidth of Communications/ 13.8 Chaos Communications in the Real World/ A Appendix: Chaos: A.1 Nonlinear Chaotic Systems: A.1.1 Discrete Systems/ A.1.2 Continuous Systems/ A.1.3 Delay Differential Systems/ A.2 Analysis and Characteristic Descriptions for Chaotic Data: A.2.1 Phase Space, Attractor, and Poincarｫe Map/ A.2.2 Steady State Behaviors/ A.2.3 Fractal Dimension and Correlation Dimension/ A.2.4 Lyapunov Exponent/ Contents XVII/ A.3 Chaos Control / A.4 Chaos Synchronization/ References/ Index/
* This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented. *
Cressler, J. D.
Silicon Heterostructure Devices
CRC Press 2007.12
472 pp.(H)
ISBN 1-4200-6690-0
12,400円
Contents
1.The Big Picture/ 2.A Brief History of the Field/ 3.SiGe HBTs/ 4.Overview: SiGe HBTs/ 5.Device Physics/ 6.Second-Order Effects/ 7.Low-Frequency Noise/ 8.Broadband Noise/ 9.Microscopic Noise Simulation/ 10.Linearity/ 11.pnp SiGe HBTs/ 12.Temperature Effects/ 13.Radiation Effects/ 14.Reliability Issues/ 15.Self-Heating and Thermal Effects/ 16.Device-Level Simulation/ 17.SiGe HBT Performance Limits 18.Overview: Heterostructure FETs/ 19.Biaxial Strained Si CMOS/ 20.Uniaxial Stressed Si MOSFET/ 21.SiGe-Channel HFETs/ 22.Industry Examples at State-of-the-Art: Intel 90 nm Logic Technologies/ 23.Overview: Other Heterostructure Devices/ 24.Resonant Tunneling Devices/ 25.IMPATT Diodes/ 26.Engineered Substrates for Electronic and Optoelectronic Systems/ 27.Self-Assembling Nanostructures in Ge(Si)i Heteroepitaxy/ 28.Optoelectronic Components/ 29.Overview: Optoelectronic Components/ 30.SiiGe LEDs/ 31.Near-Infrared Detectors/ 32.Si-Based Photonic Transistors for Integrated Optoelectronics/ 33.SiiGe Quantum Cascade Emitters/ 34.Appendices/ 35.Properties of Silicon and Germanium/ 36.The Generalized Moll-Ross Relations/ 37.Integral Charge-Control Relations/ 38.Sample SiGe HBT Compact Model Parameters/ index/
* SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. *
Cressler, J. D. et al. ed.
SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
CRC Press 2007.12
264 pp.(H)
ISBN 1-4200-6685-4
8,700円
Contents
1.The Big Picture (J.D. Cressler )/ 2.A Brief History of the Field (J.D. Cressler)/ 3.SiGe and Si Strained-Layer Epitaxy/ 4.Overview: SiGe and Si Strained-Layer Epitaxy (J.D. Cressler)/ 5.Strained SiGe and Si Epitaxy (B. Tillack)/ 6.Si/SiGe(C) Eptiaxy by RTCVD (D. Dutartre)/ 7.MBE Growth Techniques (M. Oehme)/ 8.UHV/CVD Growth Techniques (T.N. Adam)/ 9.Defects and Diffusion in SiGe and Strained Si (A.R. Peaker)/ 10.Stability Constraints in SiGe Epitaxy (A. Fischer)/ 11.Electronic Properties of Strained Si/SiGe and Si1Cy Alloys (J.L. Hoyt)/ 12.Carbon Doping of SiGe (H.J. Osten)/ 13.Contact Metallization on Siliconermanium (C.K. Maiti)/ 14.Selective Etching Techniques for SiGe/Si (S. Monfray)/ 15.Appendices/ 16.Properties of Silicon and Germanium (J.D. Cressler)/ 17.The Generalized Moll-Ross Relations (J.D. Cressler)/ 18.Integral Charge-Control Relations (M. Schrer)/ 19.Sample SiGe HBT Compact Model Parameters (R.M. Malladi)/ Index/ *
78-89 登録日 08.02.03
