Dimoulas, A. et al. ed.
Advanced Gate Stacks for High-Mobility Semiconductors
Springer-Verlag 2008.1
383 pp.(H)
ISBN 3-540-71490-1
24,000円
Contents
1. Strained-Si CMOS Technology/ 2. High Current Drivability MOSFET Fabricated on Si(110) Surface/ 3. Advanced High-Mobility Semiconductor-on-Insulator Materials/ 4. Passivation and Characterization of Germanium Surfaces/ 5. Interface Engineering for High-k Ge MOSFETs/ 6. Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate Metal-Oxide-Semiconductor Devices/ 7. Modeling of Growth of High-k Oxides on Semiconductors/ 8. Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs/ 9. Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case/ 10. High κ Gate Dielectrics for Compound Semiconductors/ 11. Interface Properties of High-k Dielectrics on Germanium/ 12. A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-κ Materials and Films/ 13. Germanium Nanodevices and Technology/ 14. Opportunities and Challenges of Germanium Channel MOSFETs/ 15. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates/ 16. Processing and Characterization of IIIV Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics/ 17. Fabrication of MBE High-κ Mosfets in a Standard CMOS Flow/ References/ Index/ *
Grasser, T. & Selberherr, S. ed.
Simulation of Semiconductor Processes and Devices 2007
SISPAD 2007
Springer-Verlag 2007.
458 pp.(H) With CD-ROM
ISBN 3-211-72860-0
16,700円
Contents
* This volume contains the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria.
* It provides a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. * This volume covers device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation. *
Mishra, U. & Singh, J.
Semiconductor Device Physics and Design
Springer-Verlag 2007.12.4
560 pp.(H)
ISBN 1-4020-6480-2
14,500円
Contents
1. Structural Properties of Semiconductors/ 2. Electronic levels in semiconductors/ 3. Charge transport in materials/ 4. Junctions in Semiconductors: P-N Diodes/ 5. Semiconductor Junctions/ 6. Bipolar Junction Transistors/ 7. Temporal Response Of Diodes and Bipolar Transistors/ 8. Field Effect Transistors/ 9. Field Effect Transistors: MOSFET/ 10. Coherent Transport and Mesoscopic Devices/ A.List of Sysmbols/ B.Boltzmann Transport Theory C.Density of States/ D.Important Properties of Semiconductiors/ E.Beyond the Depletion Approximation/ Index/ *
Pelliccione, M. & Lu, T. - M.
Evolution of Thin Film Morphology
Modeling and Simulations
（薄膜形状の発展）
Springer-Verlag 2008.1
208 pp.(H)
ISBN 0-387-75108-4
19,400円
Contents
1.Introduction/ 2.Surface Statistics/ 3.Self-Affine Surfaces/ 4.Mounded Surfaces/ 5.Stochastic Growth Equations/ 6.Small World Growth Model: A Case Study/ 7.Monte Carlo Simulations/ 8.Drop-down Aggregation Models/ 9.Ballistic Aggregation Models/ 10.Conclusions/ Index/
* Thin film deposition is the most ubiquitous and critical of the processes used to manufacture high tech devices. Morphology and microstructure of thin films directly controls their optical, magnetic, and electrical properties. This book focuses on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem both through numerical calculations based on Langevin continuum equations, and through Monte Carlo simulations based on discrete surface growth models when an analytical formulism is not convenient. Evolution of Thin-Film Morphology will be of benefit to university researchers and industrial scientists working in the areas of semiconductor processing, optical coating, plasma etching, patterning, micro-machining, polishing, tribology, and any discipline that requires an understanding of thin film growth processes. *
Capper, P. & Mauk, M. ed.
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
電子、光学とオプトエレクトロニクス材料の液層エピタキシー
John Wiley & Sons 2007.9
464 pp. (H)
ISBN 0-470-85290-9
33,200円
Contents
Series Preface / Preface / Acknowledgements / List of Contributors / 1. Introduction to Liquid Phase Epitaxy / 2. Liquid Phase Epitaxy in Russia Prior to 1990 / 3. Phase Diagrams and Modeling in Liquid Phase Epitaxy / 4. Equipment and Instrumentation for Liquid Phase Epitaxy / 5. Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy / 6. Liquid Phase Epitaxy of Silicon Carbide / 7. Liquid Phase Epitaxy of Gallium Nitride / 8. Liquid Phase Epitaxy of Quantum Wells and Quantum Dots / 9. Liquid Phase Epitaxy of Hg1-x CDx Te (MCT) / 10. Liquid Phase Epitaxy of Widegap II-VIs / 11. Liquid Phase Epitaxy of Garnets / 12. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications / 13. Liquid Phase Epitaxy for Light Emitting Diodes / Index / *
* This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. *
Zabel, H. & Bader, S. D. ed.
Magnetic Heterostructures
Advances and Perspectives in Spinstructures and Spintransport
（磁性ヘテロ構造 スピン構造とスピン輸送の進歩と視点）
Springer-Verlag 2008.
364 pp.(H)
ISBN 3-540-73461-9
33,800円
Contents
1.Modern Growth Problems and Growth Techniques/ 2.Magnetic Anisotropy of Heterostructures/ 3.Exchange Bias Effect of Ferro-/Antiferromagnetic Heterostructures/ 4.Exchange Coupling in Magnetic Multilayers/ 5.Proximity Effects in Ferromagnet 6.Superconductor Heterostructures/ 7.Magnetic Tunnel Junctions/ 8.Ferromagnet 9.Semiconductor Heterostructures and Spininjection/ index/
* Magnetic heterostructures constitute an important field in magnetism and nanotechnology, which has developed over the past fifteen years due to important advances in epitaxial- growth techniques and lithographic processes. Magnetic heterostructures combine different physical properties which do not exist in nature. Examples are semiconductors/ferromagnets, superconductors/ferromagnets, and ferromagnets/antiferromagnets. *
Ivanov, A. L. & Tikhodeev, S. G. ed.
Problems of Condensed Matter Physics
Quantum coherence phenomena in electron-hole and coupled matter-light systems
Oxford U.P. 2008.1
376 pp.(H)
ISBN 0-19-923887-1
16,400円
Contents
0. Preface/ 1. Recollections/ 2. Once again on the "Physical Minimum"/ 3. Hybrid Organic-Inorganic Nanostructures and Light-Matter Interaction/ 4. The acoustic-wave driven quantum processor/ 5. On the problem of many-body localization/ 6. Raman scattering by LO phonons in semiconductors: the role of the Franz-Keldysh effect/ 7. Phenomena in cold exciton gases: from theory to experiments/ 8. Composite Fermions and Fractional Quantum Hall effect in two-dimensional electron system / 9. Microcavities with quantum dots: weak and strong coupling regimes/ 10. Dynamics of cold excitons and electron-hole ensembles in direct-gap semiconductors studied by mid-infrared pump and probe spectroscopy/ 11. Exciton Coherence/ 12. Inelastic Light Scattering by Low-lying Excitations of Quantum Hall Fluids/ 13. Remarks on Surface-atoms Forces in London and Lifshitz Limits/ 14. Modern trends in semiconductor spintronics/ 15. Excitonic insulators, electron-hole liquids and metal-insulator transitions/ 16. Electron--hole liquid in semiconductors/ 17. Collective state of interwell excitons in double quantum wells heterostructures/ 18. Bose-Einstein condensation of excitons: Promise and disappointment/ 19. Acoustically induced superlattices: from photons and electrons to excitons and polaritons/ 20. Inelastic tunneling spectroscopy of single surface adsorbed molecules/ Index/
* This book is dedicated to Professor Leonid V Keldysh. His brilliant contributions to condensed matter physics include the Franz-Keldysh effect, an electron-hole liquid, the nonequilibrium (Keldysh) diagram technique, Bose-Einstein condensation (of excitons) and a ``metal-dielectric'' transition, acoustically-induced superlattices, multi-photon transitions and impact ionization in solids. In many respects, his work influenced and formed the paradigm of modern condensed matter physics. As a result, many famous researchers in the field have enthusiastically provided unique contributions to the book. *
Novoa, J. J. et al. ed.
Engineering of Crystalline Materials Properties
結晶性材料の特性のエンジニアリング
Springer-Verlag 2008.
518 pp.(H)
ISBN 1-4020-6822-0
30,400円
Proceedings of the NATO Advanced Study Institute on Engineering of Crystalline Materials Properties: State of the Art in Modeling, Design and Applications. New materials for better Defence and Safety, Erice, Italy, 7-17 June 2007
Contents
1.Preface/ 2.List of Contributors/ 3.Biomineralization Design Strategies And Mechanisms of Mineral Formation: Operating At the Edge Instability/ 4.Self-Assembled Monolayers As Templates For Inorganic Crystallization: A Bio-Inspired Approach/ 5.Databases In Crystal Engineering/ 6.Case Studies on Intermolecular Interactions In Crystalline Metals/ 7.Crystal Polymorphism/ 8.Complementarity: Correlating Structural Features with Physical Properties in Supramolecular Systems/ 9.Making Crystals From Crystals: A Solid-State Route To the Engineering of Crystalline Materials, Polymorphs, Solvates And Co-Crystals; Considerations on the Future of Crystal Engineering/ 10.Nanostructured Frameworks for Materials Applications/ 11.Crystal Engineering of Multfunctional Molecular Materials/ 12.Topological Approaches to the Structure of Crystalline and Amorphous Atom Assemblies/ 13.Hydrogen-Bonded Crystals of Exceptional Dielectric Properties/ 14.Chirality In Crystals/ 15.Design, Characterization and Use of Crystalline Thin Film Architectures at the Air-Liquid lnterface/ 16. Design, Synthesis, And Characterization of Molecule-Based Magnet/ 17.From Bonds To Packing: An Energy-Based Crystal Packing Analysis for Molecular Crystals/ 18.On the Calculation and Interpretation of Crystal Energy Landscapes/ 19.NMR Crystallography and the Elucidation of Structure-Property Relationships In Crystalline Solids/ 20.Organic Materials For Nonlinear Optics/ 21.Building Conducting Materials. From Design to Devices/ 22.Hydrogen Bonding and Concurrent Interaction/ 23.Signalling by Modulation of Intermolecular Interactions/ 24.Biomineralization of Organic Phases Associated With Human Diseases/ 25.Crystal Structure Determination From X-Ray Powder Diffraction Data/ 26.Surface Properties of the Binary Alloy Thin Films/ Subject Index/ *
78-90 登録日 08.04.05
